'j cx , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 tip130/131/132 tip135/136/137 complementary silicon power darlington transistors description the tip130, TIP131 and tip132 are silicon epitaxial-base npn power transistors in monolithic darlington configuration, mounted in jedec to-220 plastic package. they are intented for use in power linear and switching applications. the complementary pnp types are tip135, tip136andtip137. to-220 internal schematic diagram sc07140 3 se071sd rityp. =5kii r2typ. = absolute maximum ratings symbol vcbo vceo vebo ic i cm ib ptot tstg tj parameter npn pnp collector-base voltage (!e = 0) collector-emitter voltage (ib = 0) emitter-base voltage (lc = 0) collector current collector peak current base current total dissipation at tease ^ 25 c tamb < 25 c storage temperature max. operating junction temperature value tip130 TIP131 tip135 tip136 60 80 60 80 tip132 tip137 100 100 5 8 12 0.3 70 2 -65 to 150 150 unit v v v a a a w w c c for pnp types voltage and current values are negative. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
tip130/t1p131/tip132/tip135/tip136/t1p137 thermal data rthj-case rthj-amb thermal resistance junction-case max thermal resistance junction-ambient max 1.78 63.5 c/w c/w electrical characteristics (tcase = 25 c unless otherwise specified) symbol iceo icbo iebo vceo(sus)* vce(sat)* vbe(oh)* hfe* parameter collector cut-off current (le = 0) collector cut-off current (ib = 0) emitter cut-off current (lc = 0) collector-emitter sustaining voltage (i8= 0) collector-emitter saturation voltage base-emitter voltage dc current gain test conditions vce = half rates vceo vcb = half rates vcbo veb = 5 v ic = 30 ma fortip130/135 forTIP131/136 for tip132/137 ic = 4 a ib = 16 ma ic = 6 a ib = 30 ma ic = 4 a vce = 4 v ic = 1 a vce = 4 v. ic = 4 a vce = 4 v min. 60 80 100 500 1000 typ. max. 0.5 0.2 5 2 4 2.5 15000 unit ma ma ma v v v v v v 1 for pnp types voltage and current valuesjire negativ^. dim a c d d1 e f f1 f2 g g1 h2 l2 l4 l5 l6 l7 l9 dia. min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.4 10.0 13.0 2.65 15.25 6.2 3.5 3.75 o? r * ? mm typ. 1.27 16.4 / i i t i i i i ' *\ ? ' -u _ x^"\! dia. ?-^_ j? l5 l7 l6 max. 4.60 1.32 272 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 295 15.75 6.6 3.93 3.85 u | f= 1 12 ~w~ __ ^~\ .? ii ..n ? min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 u_ ^j^zz? cm lj_ ?? l4 inch typ. 0,050 , 0.645 ill , _u ? u =4=- el5[ u. max. . 0.181 0.051 0.107 0,027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 cm
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